Physical quantity sensor, electronic apparatus, and moving object

ABSTRACT

A physical quantity sensor includes a sensor element, an integrated circuit that is electrically connected to the sensor element, and a ceramic package (base body) on which the integrated circuit is mounted. A first conductor pattern (interconnection pattern) for electrical connection with the outside is provided on one surface of the ceramic package. A second conductor pattern is provided to be electrically connected to the interconnection pattern. The second conductor pattern includes an interconnection pattern that passes through the inside of the ceramic package, and a metallized region that is exposed on the other surface of the ceramic package. The interconnection pattern is longer than a distance between the one surface and the other surface of the ceramic package.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation patent application of U.S. application Ser. No.14/256,239 filed Apr. 18, 2014, which claims priority to Japanese PatentApplication No. 2013-090231, filed Apr. 23, 2013, which are expresslyincorporated by reference herein in their entireties.

BACKGROUND

1. Technical Field

The present invention relates to a physical quantity sensor, anelectronic apparatus, and a moving object.

2. Related Art

Currently, in various systems or electronic apparatuses, physicalquantity sensors, which are capable of detecting various physicalquantities, such as an acceleration sensor that detects acceleration anda gyro sensor that detects an angular velocity have been widely used.Particularly, recently, an angular velocity sensor or an accelerationsensor is embedded in a portable apparatus such as a smart phone, andthus miniaturization and thickness reduction of a sensor package havebecome important.

As an example of a sensor package in the related art, JP-A-2009-59941discloses an air-tightly sealed semiconductor package provided with anexternal electrode unit whose one end is exposed on an outer surface ofan IC substrate and is electrically connected to the outside. Inaddition, JP-A-2009-41962 discloses a package having a structure inwhich the electrode unit of an IC and a sensor element is connected toan internal electrode of a ceramic package through wire bonding, and isconnected to an external electrode through an interconnection inside theceramic package. In any example, the package plays a role of protectingan internal device and of securing airtightness, and plays a role ofsecuring electrical conduction between the inside and the outside of thepackage. Accordingly, in an interconnection inside a typical package, anelectrical interconnection in which an interconnection resistance is setto be significantly low is demanded, and thus input and output of asignal is performed in a state in which voltage drop is small. In thismanner, in a case of the interconnection structure and interconnectionmaterial in which the interconnection resistance is set to besignificantly low, the voltage drop is small in an interconnection of apower supply line or a communication line, and the interconnectionstructure and interconnection material are suitable.

However, in a case of connecting the sensor package in the related artto an external circuit such as a microcomputer and an amplificationcircuit, resistance against a power supply noise and a communicationnoise is not expected. Therefore, in the case of the power supply line,a noise may be mixed-in to the inside of a sensor, and thus there is apossibility of causing malfunction or abnormality in function. Inaddition, in the case of the communication line, there is a problem inthat overshoot or undershoot may occur in a signal waveform by aparasitic component that occurs due to an interconnection with anexternal circuit or mismatching in an impedance, thereby leading to acommunication failure.

SUMMARY

An advantage of some aspects of the invention is to provide a physicalquantity sensor having a package structure which is capable of improvingresistance against noise from an external device or which is capable ofreducing mismatching in impedance with the external device, and anelectronic apparatus and a moving object which use the physical quantitysensor.

The invention can be implemented as the following forms or applicationexamples.

Application Example 1

This application example is directed to a physical quantity sensorincluding a sensor element, an integrated circuit that is electricallyconnected to the sensor element, and a base body on which the integratedcircuit is mounted. A first conductor pattern for electrical connectionwith the outside is disposed on one surface of the base body. A secondconductor pattern is disposed to be electrically connected to the firstconductor pattern. The second conductor pattern includes a firstinterconnection pattern that is disposed inside the base body, and asecond interconnection pattern that is disposed on the other surface ofthe base body. The first interconnection pattern is longer than adistance between the one surface and the other surface.

The physical quantity sensor according to this application example maybe an inertial sensor such as an acceleration sensor, a gyro sensor(angular velocity sensor), and a speed sensor, or may be an inclinometerthat measures an inclination angle on the basis of gravity.

According to the physical quantity sensor of this application example,since the second conductor pattern that is electrically connected to thefirst conductor pattern for electrical connection with the outside islonger than a conductor pattern that is formed with the shortest route(in a linear shape on an upper side) from the outside similar to therelated art, a resistance value of the second conductor pattern becomeshigher than that of a conductor pattern in the related art, and thusnoise resistance is improved.

Application Example 2

In the physical quantity sensor according to the application exampledescribed above, in a plan view of the base body, the firstinterconnection pattern may extend at least from the one end side of theintegrated circuit to the other end side.

According to the physical quantity sensor of this application example,even when the width of the base body is not enlarged, the firstinterconnection pattern can be provided to be long, and thus it ispossible to efficiently form an interconnection pattern having a highresistance value. Accordingly, it is possible to increase noiseresistance or impedance matching.

Application Example 3

In the physical quantity sensor according to the application exampledescribed above, the first interconnection pattern may include a linearshape.

According to the physical quantity sensor of this application example,it is possible to efficiently form an interconnection pattern having ahigh resistance value by using an inner-layer interconnection of thebase body. Accordingly, it is possible to increase noise resistance orimpedance matching.

Application Example 4

In the physical quantity sensor according to the application exampledescribed above, at least a part of the first interconnection patternmay have a meandering shape.

According to the physical quantity sensor of this application example,it is possible to efficiently form an interconnection pattern having aresistance value higher than that of an interconnection pattern having alinear shape by using an inner-layer interconnection of the base body.Accordingly, it is possible to increase noise resistance or impedancematching.

Application Example 5

In the physical quantity sensor according to the application exampledescribed above, the base body may include a first layer and a secondlayer. The first interconnection pattern may include a plurality ofthird interconnection patterns that are provided between the first layerand the second layer, a plurality of fourth interconnection patternswhich are disposed at the first layer and which are provided on a sideopposite to the plurality of third interconnection patterns in the firstlayer, and a plurality of vias that electrically connect the pluralityof third interconnection patterns and the plurality of fourthinterconnection patterns, respectively. The first interconnectionpattern may include a meandering shape in a side view of the base body.

The first layer may be a layer on an upper side of the second layer, ora layer on a lower side of the second layer.

According to the physical quantity sensor of this application example,it is possible to efficiently form an interconnection pattern, which hasa resistance value higher than that of a linear interconnection patternthat is formed in one layer, by using two layers of the base body.Accordingly, it is possible to further increase noise resistance orimpedance matching.

Application Example 6

In the physical quantity sensor according to the application exampledescribed above, the base body may include a first layer and a secondlayer. The first interconnection pattern may include a plurality ofthird interconnection patterns that are provided between the first layerand the second layer, a plurality of fourth interconnection patternswhich are disposed at the first layer and which are provided on a sideopposite to the plurality of third interconnection patterns in the firstlayer, and a plurality of vias that electrically connect the pluralityof third interconnection patterns and the plurality of fourthinterconnection patterns, respectively. The first interconnectionpattern may include a meandering shape in a plan view of the base body.

The first layer may be a layer on an upper side of the second layer, ora layer on a lower side of the second layer.

According to the physical quantity sensor of this application example,it is possible to efficiently form an interconnection pattern, which hasa resistance value higher than that of a linear interconnection patternthat is formed in one layer, by using two layers of the base body.Accordingly, it is possible to further increase noise resistance orimpedance matching.

Application Example 7

In the physical quantity sensor according to the application exampledescribed above, a part of the second conductor pattern may beconstituted by a material having a sheet resistance value higher than asheet resistance value of the first conductor pattern.

According to the physical quantity sensor of this application example,it is possible to easily form an interconnection pattern having a highresistance value without increasing a mounting area. Accordingly, it ispossible to further increase noise resistance or impedance matching.

Application Example 8

In the physical quantity sensor according to the application exampledescribed above, a third conductor pattern having a constant potentialmay be provided inside the base body, and the third conductor patternmay be provided at least at both sides of the first interconnectionpattern.

According to the physical quantity sensor of this application example,it is possible to make the periphery of the first interconnectionpattern, which constitutes the second conductor pattern, have lowimpedance, and thus it is possible to make noise overlapping less likelyto occur in the second conductor pattern.

Application Example 9

This application example is directed to an electronic apparatusincluding any of the physical quantity sensors described above.

Application Example 10

This application example is directed to a moving object including any ofthe physical quantity sensors described above.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a view illustrating an example of a functional block diagramof a physical quantity sensor of this embodiment.

FIG. 2 is a perspective view of an external appearance (sensor package)of the physical quantity sensor of this embodiment.

FIG. 3 is an exploded perspective view of the sensor package.

FIG. 4 is a view illustrating a longitudinal structure of a ceramicpackage in a first embodiment.

FIG. 5 is a view illustrating an example of an interconnection patternin the first embodiment.

FIGS. 6A and 6B are views illustrating an example of two waveforms whena rectangular wave signal propagates through an internal conductorpattern of the related art and an internal conductor pattern of thefirst embodiment.

FIG. 7 is a view illustrating an example of an interconnection patternin a second embodiment.

FIGS. 8A to 8B are views illustrating an example of two waveforms when arectangular wave signal propagates through the internal conductorpattern of the related art, the internal conductor pattern of the firstembodiment, and an internal conductor pattern of the second embodiment.

FIG. 9 is a view illustrating a longitudinal structure of a ceramicpackage in a third embodiment.

FIGS. 10A and 10B are views illustrating an example of aninterconnection pattern in the third embodiment.

FIG. 11 is a view illustrating a longitudinal structure of a ceramicpackage in a fourth embodiment.

FIGS. 12A and 12B are views illustrating an example of aninterconnection pattern in the fourth embodiment.

FIG. 13 is a view obtained by superimposing FIG. 12B on FIG. 12A.

FIG. 14 is a view illustrating a longitudinal structure of a ceramicpackage in a fifth embodiment.

FIG. 15 is a view illustrating an example of an interconnection patternin the fifth embodiment.

FIG. 16 is a functional block diagram of an electronic apparatus of thisembodiment.

FIG. 17 is a view illustrating an example of an external appearance ofthe electronic apparatus of this embodiment.

FIG. 18 is a view illustrating an example of a moving object of thisembodiment.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, preferred embodiments of the invention will be described indetail with reference to the attached drawings. In addition, thefollowing embodiments are not intended to limit the content of theinvention described in the appended claims. In addition, it cannot besaid that the entire configurations described below are essentialconstruction requirements of the invention.

1. Physical Quantity Sensor 1-1. First Embodiment

FIG. 1 is an example of a functional block diagram of a physicalquantity sensor of this embodiment. As shown in FIG. 1, a physicalquantity sensor 1 of this embodiment includes an integrated circuit (IC)10 and a sensor element 20.

In FIG. 1, the sensor element 20 is a vibration-type piezoelectricangular velocity detection element in which two drive electrodes and twodetection electrodes are formed in a so-called double T-type quartzvibrator element including two T-type drive vibrating arms and onedetection vibrating arm formed between the drive vibrating arms.

When an alternating voltage signal as a drive signal is supplied to thetwo drive vibrating arms of the sensor element 20, the two drivevibrating arms perform flexural vibration (excitation vibration) inwhich distal ends approach each other and are spaced from each other ina repetitive manner due to an inverse piezoelectric effect. Whenamplitudes of the flexural vibration of the two drive vibrating arms areequal to each other, the two drive vibrating arms perform the flexuralvibration in a linear symmetric relation with respect to the detectionvibrating arm at all times, and thus the detection vibrating arm doesnot cause vibration.

In this state, an angular velocity in a state in which an axisperpendicular to an excitation vibrating surface of the sensor element20 is set as a rotation axis is applied, the two drive vibrating armsobtain a Coriolis force in a direction perpendicular to both of theflexural vibration direction and the rotation axis. As a result,symmetry in the flexural vibration of the two drive vibrating armscollapses, and thus the detection vibrating arm performs flexuralvibration to maintain balance. A phase difference between the flexuralvibration of the detection vibrating arm and the flexural vibration(excitation vibration) of the drive vibrating arms, which accompaniesthe Coriolis force, is 90°. In addition, an alternating current chargeof an inverse phase (phase is different by 180°), which is based on theflexural vibration, occurs at the two detection electrodes due to apiezoelectric effect. The alternating current charge varies inaccordance with the magnitude of the Coriolis force (in other words, themagnitude of the angular velocity applied to the sensor element 20).

In addition, the vibrating element of the sensor element 20 may not bethe double T-type. For example, the vibrating element may be a tuningfork type or a tooth type, or a tuning bar type having a shape such as atriangular prism, a quadrangular prism, and a circular column. Inaddition, as a material of the vibrator element of the sensor element20, for example, a piezoelectric single crystal such as lithiumtantalate (LiTaO₃) and lithium niobate (LiNbO₃) or a piezoelectricmaterial such as piezoelectric ceramics including lead zirconatetitanate (PZT) may be used, and a silicon semiconductor may be usedinstead of quartz (SiO₂). In addition, for example, the vibrator elementmay have a structure in which a piezoelectric thin film such as zincoxide (ZnO) and aluminum nitride (AlN) inserted into a drive electrodeis disposed on a part of a surface of the silicon semiconductor.

In addition, the sensor element 20 is not limited to the piezoelectricsensor element, and may be a sensor element of a vibration type such asan electromotive type, an electrostatic capacity type, an eddy currenttype, an optical type, and a strain gauge type. In addition, a type ofthe sensor element 20 is not limited to the vibration type, and may be,for example, an optical type, a rotation type, and a fluid type. Inaddition, a physical quantity that is detected by the sensor element 20is not limited to the angular velocity, and may be angular acceleration,acceleration, a velocity, a pressure, a force, and the like.

As shown in FIG. 1, in this embodiment, the two drive electrode of thesensor element 20 are connected to a DS terminal and a DG terminal ofthe integrated circuit (IC) 10, respectively. In addition, the twodetection electrodes of the sensor element 20 are connected to an S1terminal and an S2 terminal of the integrated circuit (IC) 10,respectively.

The integrated circuit (IC) 10 includes a drive circuit 11, a detectioncircuit 12, a temperature sensor 13, a power supply voltage sensor 14, areference voltage circuit 15, a serial interface circuit 16, anonvolatile memory 17, a switching control circuit 18, and a terminalfunction switching circuit 19. In addition, the integrated circuit (IC)10 of this embodiment may have a configuration in which parts of theelements shown in FIG. 1 are omitted or modified, or other elements areadded.

The reference voltage circuit 15 generates a constant voltage or aconstant current of a reference potential (analog ground voltage) andthe like from a power supply voltage supplied from a VDD terminal, andsupplies the constant voltage or the constant current to the drivecircuit 11, the detection circuit 12, and the temperature sensor 13.

The drive circuit 11 generates a drive signal that allows the sensorelement 20 to perform excitation vibration, and supplies the drivesignal to one of the drive electrodes of the sensor element 20 throughthe DS terminal. In addition, a drive current (quartz current) that isgenerated in the other drive electrode by the excitation vibration ofthe sensor element 20 is input to the drive circuit 11 through the DGterminal, and the drive circuit 11 performs feedback control of anamplitude level of a drive signal in order for an amplitude of the drivecurrent to be maintained constantly. In addition, the drive circuit 11generates a signal whose phase deviates from that of the drive signal by90°, and supplies the signal to the detection circuit 12.

Alternating current charges (detection currents) that are generated inthe respective two detection electrodes of the sensor element 20 areinput to the detection circuit 12 through the S1 terminal and the S2terminal, respectively. The detection circuit 12 detects only an angularvelocity component contained in the alternating current charges(detection currents) and generates a signal (angular velocity signal) ofa voltage level in correspondence with the magnitude of the angularvelocity. In this embodiment, the detection circuit 12 converts thedetection currents input from the S1 and S2 terminals into voltages, andfurther performs A/D conversion by setting the signal (signal having aphase deviated from that of the drive signal by 90°) supplied from thedrive circuit 11 to a sampling clock to generate a detection signal(angular velocity signal) by digital processing.

The temperature sensor 13 generates a signal in which a voltageapproximately linearly varies according to a temperature variation, A/Dconverts this signal, and outputs the converted signal. The temperaturesensor 13 may be realized by using, for example, a band gap referencecircuit.

The power supply voltage sensor 14 A/D converts a power supply voltagevalue that is supplied from the VDD terminal and outputs the convertedpower supply voltage value.

The nonvolatile memory 17 stores various kinds of adjustment data orcorrection data with respect to the drive circuit 11, the detectioncircuit 12, and the temperature sensor 13. The nonvolatile memory 17 maybe realized by, for example, a metal oxide nitride oxide silicon (MONOS)type memory.

In a process of generating an angular velocity signal, the detectioncircuit 12 performs zero-point power supply voltage correction,zero-point temperature correction, and sensitivity temperaturecorrection of the angular velocity signal by using the digital outputsignal supplied from the temperature sensor 13 and the power supplyvoltage sensor 14, and the correction data stored in the nonvolatilememory 17.

The angular velocity signal (digital signal) generated by the detectioncircuit 12 is supplied to the serial interface circuit 16.

The terminal function switching circuit 19 switches a connectiondestination of each of four terminals IO1, IO2, IO3, and IO4. Forexample, the terminal function switching circuit 19 selects an outputsignal or an internal signal of the drive circuit 11, the detectioncircuit 12, and the reference voltage circuit 15 under control of theswitching control circuit 18, and outputs the selected signal to theoutside from any one of the IO1, IO2, IO3, and IO4. In addition, theterminal function switching circuit 19 may supply an external signalthat is input from any one of the IO1, IO2, IO3, and IO4 to the drivecircuit 11, the detection circuit 12, and the reference voltage circuit15.

The switching control circuit 18 controls the switching of theconnection destination of the four terminals IO1, IO2, IO3, and IO4according to a setting value received from the serial interface circuit16.

The physical quantity sensor 1 of this embodiment is configured in sucha manner that the integrated circuit (IC) 10 and the gyro sensor element20 are sealed in a package. FIG. 2 is a perspective view of an externalappearance (sensor package) of the physical quantity sensor 1 of thisembodiment, and FIG. 3 is an exploded perspective view of the sensorpackage.

As shown in FIGS. 2 and 3, the physical quantity sensor 1 is mounted asa sensor package having the following structure. Specifically, theintegrated circuit (IC) 10 is disposed at an opening of a ceramicpackage 30 (an example of a base body) in which a plurality of layersare laminated, a sensor element holding member 40 is disposed on anupper surface of the ceramic package 30, the sensor element 20 is heldon the sensor element holding member 40 to vibrate, and a cover unit(lid) 50 is bonded to a seam ring provided on the upper surface of theceramic package 30. The ceramic package 30 serves as casing of theintegrated circuit (IC) 10 and the sensor element 20, and plays a roleof electrically connecting the integrated circuit (IC) 10 and the sensorelement 20 to the outside.

FIG. 4 is a view illustrating a longitudinal structure of the ceramicpackage 30. As shown in FIG. 4, in the ceramic package 30, for example,five ceramic substrates 31A, 31B, 31C, 31D, and 31E are laminated. Forexample, the thickness of the ceramic package 30 (a total of thethickness of the respective ceramic substrates 31A, 31B, 31C, 31D, and31E) is approximately 1 mm, and the length of one side of a surface ofthe ceramic substrate 31E is, for example, approximately 5 mm.

A conductive interconnection pattern is formed on the surface (in thisembodiment, the interconnection pattern is formed on the upper surface,but may be formed on a lower surface) of each of the ceramic substrate.Parts of the interconnection patterns that are formed on the surface oftwo adjacent ceramic substrates are electrically connected to each otherthrough a via formed in a through-hole (hole). For example, the “via”may be configured in such a manner that a conductive film is provided onan inner wall of the through-hole (hole) to electrically connect a frontsurface side and a rear surface side of a substrate, or may beconfigured in such a manner that a conductive material is filled insidethe through-hole (hole) to electrically connect the front surface sideand the rear surface side of the substrate. An interconnection pattern(external conductor pattern), which serves as an external terminal, isformed on the lower surface (bottom surface of the ceramic package 30)of the lowermost ceramic substrate 31E. The external conductor pattern(external terminal) is soldered to a printed substrate (not shown) forelectrical connection with an external device.

An opening is provided at the center of each of the ceramic substrates31A, 31B, and 31C, and the integrated circuit (IC) 10 is disposed in theopening. A metallized region, which is metallized by a material such asgold and nickel at least at a part of the interconnection pattern, isformed on the upper surface of the ceramic substrate 31B, and theterminal (electrode) of the integrated circuit (IC) 10 and themetallized region are wire-bonded.

As described above, the external conductor pattern is electricallyconnected to the integrated circuit (IC) 10 through a conductor pattern(internal conductor pattern) including a plurality of theinterconnection patterns formed on the surface of the ceramic substrates31A, 31B, 31C, 31D, and 31E, and a plurality of the vias thatelectrically connect the plurality of interconnection patterns.

A tungsten material or a material such as silver and copper having a lowsheet resistance value is used for the interconnection pattern that isformed on the surface of each of the ceramic substrate and the via. InFIG. 4, an oblique line is drawn in the interconnection pattern, and avertical line is drawn in the via.

In this embodiment, an interconnection pattern 61 is formed on thebottom surface of the ceramic substrate 31E (bottom surface (onesurface) of the ceramic package 30) and is electrically connected to aninterconnection pattern 63, which extends at least from one end side tothe other end side of the integrated circuit (IC) 10 on the uppersurface of the ceramic substrate 31E, through a via 62. Theinterconnection pattern 63 is electrically connected to aninterconnection pattern 65, which is formed on an upper surface of theceramic substrate 31D, through a via 64. The interconnection pattern 65is electrically connected to an interconnection pattern 67, which isformed on an upper surface of the ceramic substrate 31C, through a via66. The interconnection pattern 67 is electrically connected to aninterconnection pattern 69, which is formed on the upper surface of theceramic substrate 31B, through a via 68. In addition, a metallizedregion 70 is provided on a part of an upper surface of theinterconnection pattern 69 to be exposed on the upper surface (the othersurface) of the ceramic package 30, and the metallized region 70 iswire-bonded to the terminal (electrode) of the integrated circuit (IC)10.

That is, the interconnection pattern 61 (first conductor pattern), whichis an external conductor pattern, is electrically connected to theintegrated circuit (IC) 10 through an internal conductor pattern (secondconductor pattern) that is constituted by the via 62, theinterconnection pattern 63 (an example of the first interconnectionpattern), the via 64, the interconnection pattern 65, the via 66, theinterconnection pattern 67, the via 68, the interconnection pattern 69,and the metallized region 70 (an example of the second interconnectionpattern). In addition, for example, the interconnection pattern 61 isconnected to any one of the VDD terminal, a VSS terminal, terminals (SS,SCLK, SI, and SO) for serial communication, and the IO terminals (IO1,IO2, IO3, and IO4) of the integrated circuit (IC) 10 shown in FIG. 1.

FIG. 5 is a view illustrating an example of the interconnection pattern63 that is formed on the upper surface of the ceramic substrate 31E. Asshown in FIG. 5, the interconnection pattern 63 in this embodiment isformed in a linear shape (approximately linear shape) on the uppersurface of the ceramic substrate 31E, and is longer than the distancebetween the bottom surface (one surface) and the upper surface (theother surface) of the ceramic package 30, that is, the thickness of theceramic package 30 (for example, approximately 1 mm). Accordingly, thesecond conductor pattern including the interconnection pattern 63 islonger than an internal conductor pattern (the length thereof isapproximately equal to the thickness of a ceramic substrate) that isformed with the shortest route from an external conductor pattern (in alinear shape on an upper side) similar to the related art, and has alength that is at least approximately two or more times the length ofthe internal conductor pattern. Therefore, a resistance value of thesecond conductor pattern is set to approximately two or more times aresistance value of the internal conductor pattern in the related art.In addition, it is preferable that the interconnection pattern 63 is atleast longer than a half of the length (for example, approximately 5 mm)of one side of the surface of the ceramic substrate 31E to increase theresistance value of the second conductor pattern.

In addition, for example, an internal conductor pattern (third conductorpattern), which is connected to the VSS terminal or the VDD terminal andhas a constant potential, is formed in the ceramic package 30, and theinterconnection pattern 63 is interposed between an interconnectionpattern 71 and an interconnection pattern 72 which are parts of thethird conductor pattern. Here, the constant potential may be, forexample, a power supply or a ground. Accordingly, the periphery of theinterconnection pattern 63 has low impedance, and thus noise overlappingis less likely to occur in the interconnection pattern 63.

FIG. 6A is a view illustrating an example of two waveforms when theinternal conductor pattern that is interconnected with the shortestlength similar to the related art and the internal conductor pattern(second conductor pattern) of this embodiment are used in acommunication line, and a rectangular wave signal (clock signal)propagates through the internal conductor patterns, and FIG. 6B is aview obtained by enlarging a portion surrounded by a broken line in FIG.6A. G1 represents a waveform when the rectangular wave signal propagatesthrough the internal conductor pattern that is interconnected with theshortest length, and G2 represents a waveform when the rectangular wavesignal propagates through the internal conductor pattern (secondconductor pattern) of this embodiment.

As is the case with this embodiment, in a case where an interconnectionpattern having a linear shape (approximately linear shape) longer thanthe thickness of the ceramic package 30 is formed in one layer and thusthe internal conductor pattern is made to be long, an amplitude of aringing which occurs during rising and falling of the rectangular waveis smaller and attenuation of the ringing is larger (becomes faster) incomparison to a case where the internal conductor pattern isinterconnected with the shortest length similar to the related art.

Typically, the ringing occurs when an electrical signal reciprocates ona transmission line that connects the sensor package and an externalcircuit (microcomputer and the like). In addition, the amplitude ofovershoot or undershoot may be determined by impedance of the sensorpackage, characteristic impedance of the transmission line, andimpedance of the external circuit. Accordingly, matching of these threekinds of impedance is effective to suppress occurrence of the ringing.

As is the case with this embodiment, when a part of the internalconductor pattern (second conductor pattern) is disposed in one layer ina linear shape (approximately linear shape), a resistance value becomeslarger in comparison to a case where the interconnection conductorpattern is interconnected with the shortest length, and thus it ispossible to make impedance of the sensor package 30 be close to thecharacteristic impedance of the transmission line and the impedance ofthe external circuit. In addition, an interconnection resistance thereofmay suppress an increase in Q of impedance of the transmission line.That is, when the sensor package and the external circuit are connectedat the transmission line, an LC resonance circuit constituted by anequivalent inductance component and an equivalent capacitance componentof the transmission line is created. However, when a resistance value ofthe internal conductor pattern is made to be large, Q of the LCresonance circuit is suppressed, thereby quickly attenuating vibrationof the ringing. That is, when a part of the internal conductor patternis formed in one layer in a linear shape (approximately linear shape),the same effect as a case of forming a dumping resistor is obtained.

In addition, for example, when using the internal conductor pattern(second conductor pattern) of this embodiment in a power supply line, itis possible to improve noise resistance of the power supply line.

As described above, according to the physical quantity sensor of thefirst embodiment, since a part of at least one internal conductorpattern (second conductor pattern) that is connected to the externalterminal is interconnected in a linear shape (approximately linearshape) in one layer of the ceramic package 30, it is possible toincrease noise resistance. In addition, even in a case where an externalcircuit is connected, occurrence of ringing is suppressed andcommunication failure or malfunction is less, and thus it is possible torealize high reliability. In addition, it is possible to reduce noiseemission from the viewpoint of electromagnetic compatibility (EMC), andthus an effect on other apparatuses or an apparatus itself can be madeto be small. In addition, it is possible to obtain resistance to acertain degree at which malfunction does not occur with respect tostrong electromagnetic wave noise from the outside.

In addition, according to the physical quantity sensor of the firstembodiment, since the inner-layer interconnection of the ceramic package30 is used, it is possible to realize an interconnection pattern at thelow cost without using an external mounting component while notincreasing a mounting area.

1-2. Second Embodiment

A physical quantity sensor of a second embodiment is different from thephysical quantity sensor of the first embodiment in the shape of theinterconnection pattern 63 that extends at least from one end side ofthe integrated circuit (IC) 10 to the other end side on the uppersurface of the ceramic substrate 31E. FIG. 7 is a view illustrating anexample of the interconnection pattern 63 in the second embodiment. Asshown in FIG. 7, a part of the interconnection pattern 63 (an example ofthe first interconnection pattern) of the second embodiment is formed ina meandering shape (zigzag shape) on the upper surface of the ceramicsubstrate 31E, and the interconnection pattern 63 of the secondembodiment is longer than the interconnection pattern 63 of the firstembodiment. Accordingly, the second conductor pattern including theinterconnection pattern 63 is longer than an internal conductor pattern(the length thereof is approximately equal to the thickness of a ceramicsubstrate) that is formed with the shortest route from an externalconductor pattern (in a linear shape on an upper side) similar to therelated art, and has a length that is at least approximately two or moretimes the length of the internal conductor pattern. Therefore, aresistance value of the second conductor pattern is set to approximatelytwo or more times a resistance value of the internal conductor patternin the related art. In addition, it is preferable that theinterconnection pattern 63 be at least longer than a half of the length(for example, approximately 5 mm) of one side of the surface of theceramic substrate 31E to increase a resistance value of the secondconductor pattern.

In addition, as is the case with the first embodiment, theinterconnection pattern 63 in the second embodiment is interposedbetween the interconnection pattern 71 and the interconnection pattern72 which are parts of the third conductor pattern and have a constantpotential. Accordingly, the periphery of the interconnection pattern 63has low impedance, and thus noise overlapping is less likely to occur inthe interconnection pattern 63.

In addition, the other configurations of the physical quantity sensor 1of the second embodiment are the same as those of the first embodiment,and thus a description thereof will not be repeated.

FIG. 8A is a view illustrating an example of two waveforms when theinternal conductor pattern that is interconnected with the shortestlength similar to the related art, the internal conductor pattern(second conductor pattern) in the first embodiment, and the internalconductor pattern (second conductor pattern) in the second embodimentare used in a communication line, and a rectangular wave signal (clocksignal) propagates through the internal conductor patterns, and FIG. 8Bis a view obtained by enlarging a portion surrounded by a broken line inFIG. 8A. G1 represents a waveform when the rectangular wave signalpropagates through the internal conductor pattern that is interconnectedwith the shortest length, G2 represents a waveform when the rectangularwave signal propagates through the internal conductor pattern (secondconductor pattern) of the first embodiment, and G3 represents a waveformwhen the rectangular wave signal propagates through the internalconductor pattern (second conductor pattern) of the second embodiment.

As is the case with the second embodiment, in a case where aninterconnection pattern which is longer than the thickness of theceramic package 30 and a part of which has a meandering shape (zigzagshape) is formed in one layer, and thus the internal conductor patternis made to be long, an amplitude of a ringing which occurs during risingand falling of the rectangular wave is smaller and attenuation of theringing is larger (becomes faster) in comparison to a case where theinternal conductor pattern is interconnected with the shortest lengthsimilar to the related art or a case where a part of the internalconductor pattern is formed in one layer in a linear shape(approximately linear shape) similar to the first embodiment.

As is the case with the second embodiment, when a part of the internalconductor pattern (second conductor pattern) is formed to be disposed inone layer in a meandering shape (zigzag shape), a resistance valuebecomes larger in comparison to a case where the interconnectionconductor pattern is interconnected with the shortest length, and thusit is possible to make impedance of the sensor package 30 be close tothe characteristic impedance of the transmission line and the impedanceof the external circuit. In addition, an interconnection resistancethereof may suppress an increase in Q of impedance of the transmissionline, thereby quickly attenuating vibration of the ringing.

In addition, for example, when using the internal conductor pattern(second conductor pattern) of the second embodiment in a power supplyline, it is possible to further improve noise resistance of the powersupply line.

As described above, according to the physical quantity sensor of thesecond embodiment, since a part of at least one internal conductorpattern (second conductor pattern) that is connected to the externalterminal is interconnected in a meandering shape (zigzag shape) in onelayer of the ceramic package 30, it is possible to increase noiseresistance. In addition, even in a case where an external circuit isconnected, occurrence of ringing is suppressed and communication failureor malfunction is less, and thus it is possible to realize highreliability. In addition, it is possible to reduce noise emission fromthe viewpoint of electromagnetic compatibility (EMC), and thus an effecton other apparatuses or an apparatus itself can be made to be small. Inaddition, it is possible to obtain resistance to a certain degree atwhich malfunction does not occur with respect to strong electromagneticwave noise from the outside.

In addition, according to the physical quantity sensor of the secondembodiment, since the inner-layer interconnection of the ceramic package30 is used, it is possible to realize an interconnection pattern at thelow cost without using an external mounting component while notincreasing a mounting area.

1-3. Third Embodiment

A physical quantity sensor of a third embodiment is different from thephysical quantity sensor of the first embodiment in that the secondconductor pattern includes a plurality of interconnection patterns thatare formed on the surface of a plurality of layers and a plurality ofvias that electrically connect the plurality of interconnection patternsinstead of the interconnection pattern 63.

FIG. 9 is a view illustrating a longitudinal structure of a ceramicpackage 30 in the third embodiment. As shown in FIG. 9, in the thirdembodiment, an interconnection pattern 61 that is formed on a lowersurface (bottom surface of the ceramic package 30) of a ceramicsubstrate 31E is electrically connected to an interconnection pattern63A that is formed on an upper surface of a ceramic substrate 31Ethrough a via 62. The interconnection pattern 63A is electricallyconnected to an interconnection pattern 65A that is formed on an uppersurface of a ceramic substrate 31D through a via 64A. Theinterconnection pattern 65A is electrically connected to aninterconnection pattern 63B that is formed on the upper surface of theceramic substrate 31E through a via 64B. The interconnection pattern 63Bis electrically connected to an interconnection pattern 65B that isformed on the upper surface of the ceramic substrate 31D through a via64C. The interconnection pattern 65B is electrically connected to aninterconnection pattern 63C that is formed on the upper surface of theceramic substrate 31E through a via 64D. The interconnection pattern 63Cis electrically connected to an interconnection pattern 65C that isformed on the upper surface of the ceramic substrate 31D through a via64E. The interconnection pattern 65C is electrically connected to aninterconnection pattern 63D that is formed on the upper surface of theceramic substrate 31E through a via 64F. The interconnection pattern 63Dis electrically connected to an interconnection pattern 65D that isformed on the upper surface of the ceramic substrate 31D through a via64G. The interconnection pattern 65D is electrically connected to aninterconnection pattern 67 that is formed on an upper surface of aceramic substrate 31C through a via 66. The interconnection pattern 67is electrically connected to an interconnection pattern 69 that isformed on an upper surface of a ceramic substrate 31B through a via 68.A metallized region 70 is provided on a part of an upper surface of theinterconnection pattern 69, and the metallized region 70 is wire-bondedto the terminal (electrode) of the integrated circuit (IC) 10.

That is, the interconnection pattern 61 (first conductor pattern), whichis an external conductor pattern, is electrically connected to theintegrated circuit (IC) 10 through an internal conductor pattern (secondconductor pattern) that is constituted by the via 62, theinterconnection patterns 63A to 63D, the vias 64A to 64G, theinterconnection patterns 65A to 65D, the via 66, the interconnectionpattern 67, the via 68, the interconnection pattern 69, and themetallized region 70. In addition, as shown in FIG. 9, at least apart ofthe second conductor pattern is formed in a meandering shape when viewedfrom a side surface of the ceramic package (when viewed from a directionparallel with the bottom surface).

FIG. 10A is a view illustrating an example of the interconnectionpatterns 63A to 63D (an example of a third interconnection pattern) thatare formed on the upper surface of the ceramic substrate 31E (an exampleof a second layer) (between the ceramic substrate 31E and the ceramicsubstrate 31D), and FIG. 10B is a view illustrating the interconnectionpatterns 65A to 65D (an example of a fourth interconnection pattern)that are formed on the upper surface of the ceramic substrate 31D (anexample of a first layer) (on a side opposite to the interconnectionpatterns 63A to 63D in the ceramic substrate 31D). As shown in FIGS. 10Aand 10B, all of the interconnection patterns 63A to 63D and 65A to 65Din the third embodiment are formed in a linear shape, and the length ofthe interconnection pattern (an example of the first interconnectionpattern) including the interconnection patterns 63A to 63D, the vias 64Ato 64G, and the interconnection patterns 65A to 65D is longer than thedistance between the bottom surface (one surface) and the upper surface(the other surface) of the ceramic package 30, that is, the thickness ofthe ceramic package 30 (for example, approximately 1 mm). Accordingly,the second conductor pattern including the interconnection patternconstituted by the interconnection patterns 63A to 63D, the vias 64A to64G, and the interconnection patterns 65A to 65D is longer than aninternal conductor pattern (the length thereof is approximately equal tothe thickness of a ceramic substrate) that is formed with the shortestroute from an external conductor pattern (in a linear shape on an upperside) similar to the related art, and has a length that is at leastapproximately two or more times the length of the internal conductorpattern. Therefore, a resistance value of the second conductor patternis set to approximately two or more times a resistance value of theinternal conductor pattern in the related art. In addition, it ispreferable that the sum of the length of interconnection patterns 63A to63D and 65A to 65D is at least longer than a half of the length (forexample, approximately 5 mm) of one side of the surface of the ceramicsubstrate 31E to increase the resistance value of the second conductorpattern.

In addition, as is the case with the first embodiment, theinterconnection patterns 63A to 63D in the third embodiment areinterposed between the interconnection pattern 71 and theinterconnection pattern 72 which are parts of the third conductorpattern and have a constant potential. In addition, the interconnectionpatterns 65A to 65D in the third embodiment are interposed between theinterconnection pattern 73 and the interconnection pattern 74 which areparts of the third conductor pattern. Accordingly, the periphery of theinterconnection patterns 63A to 63D and 65A to 65D has low impedance,and thus noise overlapping is less likely to occur in theinterconnection patterns 63A to 63D and 65A to 65D.

In addition, the other configurations of the physical quantity sensor 1of the third embodiment are the same as those of the first embodiment,and thus a description thereof will not be repeated.

As described above, according to the physical quantity sensor of thethird embodiment, since a part of at least one internal conductorpattern (second conductor pattern) that is connected to the externalterminal is a conductor pattern having a meandering shape (zigzag shape)when viewed in a direction parallel with the bottom surface of theceramic package 30 due to a plurality of the interconnection patternsthat are interconnected in a plurality of the layers of the ceramicpackage 30 and a plurality of the vias that connect the plurality ofinterconnection patterns, it is possible to increase noise resistance.In addition, even in a case where an external circuit is connected,occurrence of ringing is suppressed and communication failure ormalfunction is less, and thus it is possible to realize highreliability. In addition, it is possible to reduce noise emission fromthe viewpoint of electromagnetic compatibility (EMC), and thus an effecton other apparatuses or an apparatus itself can be made to be small. Inaddition, it is possible to obtain resistance to a certain degree atwhich malfunction does not occur with respect to strong electromagneticwave noise from the outside.

In addition, according to the physical quantity sensor of the thirdembodiment, the length of the second conductor pattern can be made to belonger in comparison to the first embodiment, and thus a resistancevalue of the second conductor pattern further increases. Accordingly,with regard to the above-described effects, higher effects in comparisonto the first embodiment may be expected.

In addition, according to the physical quantity sensor of the thirdembodiment, since the inner-layer interconnection of the ceramic package30 is used, it is possible to realize an interconnection pattern at thelow cost without using an external mounting component while notincreasing a mounting area.

1-4. Fourth Embodiment

A physical quantity sensor of a fourth embodiment is different from thephysical quantity sensor of the second embodiment in that the secondconductor pattern includes a plurality of interconnection patterns thatare formed on the surface of a plurality of layers and a plurality ofvias that electrically connect the plurality of interconnection patternsinstead of the interconnection pattern 63.

FIG. 11 is a view illustrating a longitudinal structure of a ceramicpackage 30 in the fourth embodiment. As shown in FIG. 11, in the fourthembodiment, an interconnection pattern 61 that is formed on a lowersurface (bottom surface of the ceramic package 30) of a ceramicsubstrate 31E is electrically connected to an interconnection pattern63A that is formed on an upper surface of a ceramic substrate 31Ethrough a via 62. The interconnection pattern 63A is electricallyconnected to an interconnection pattern 65A that is formed on an uppersurface of a ceramic substrate 31D through a via 64A. Theinterconnection pattern 65A is electrically connected to aninterconnection pattern 63B that is formed on the upper surface of theceramic substrate 31E through a via 64B. The interconnection pattern 63Bis electrically connected to an interconnection pattern 65B that isformed on the upper surface of the ceramic substrate 31D through a via64C. The interconnection pattern 65B is electrically connected to aninterconnection pattern 63C that is formed on the upper surface of theceramic substrate 31E through a via 64D. The interconnection pattern 63Cis electrically connected to an interconnection pattern 65C that isformed on the upper surface of the ceramic substrate 31D through a via64E. The interconnection pattern 65C is electrically connected to aninterconnection pattern 63D that is formed on the upper surface of theceramic substrate 31E through a via 64F. The interconnection pattern 63Dis electrically connected to an interconnection pattern 65D that isformed on the upper surface of the ceramic substrate 31D through a via64G. The interconnection pattern 65D is electrically connected to aninterconnection pattern 63E that is formed on the upper surface of theceramic substrate 31E through a via 64H. The interconnection pattern 63Eis electrically connected to an interconnection pattern 65E that isformed on the upper surface of the ceramic substrate 31D through a via64I. The interconnection pattern 65E is electrically connected to aninterconnection pattern 63F that is formed on the upper surface of theceramic substrate 31E through a via 64J. The interconnection pattern 63Fis electrically connected to an interconnection pattern 65F that isformed on the upper surface of the ceramic substrate 31D through a via64K. The interconnection pattern 65F is electrically connected to aninterconnection pattern 63G that is formed on the upper surface of theceramic substrate 31E through a via 64L. The interconnection pattern 63Gis electrically connected to an interconnection pattern 65G that isformed on the upper surface of the ceramic substrate 31D through a via64M. The interconnection pattern 65G is electrically connected to aninterconnection pattern 67 that is formed on an upper surface of aceramic substrate 31C through a via 66. The interconnection pattern 67is electrically connected to an interconnection pattern 69 that isformed on an upper surface of a ceramic substrate 31B through a via 68.A metallized region 70 is provided on apart of an upper surface of theinterconnection pattern 69, and the metallized region 70 is wire-bondedto the terminal (electrode) of the integrated circuit (IC) 10.

That is, the interconnection pattern 61 (first conductor pattern), whichis an external conductor pattern, is electrically connected to theintegrated circuit (IC) 10 through an internal conductor pattern (secondconductor pattern) that is constituted by the via 62, theinterconnection patterns 63A to 63G, the vias 64A to 64M, theinterconnection patterns 65A to 65G, the via 66, the interconnectionpattern 67, the via 68, the interconnection pattern 69, and themetallized region 70.

FIG. 12A is a view illustrating an example of the interconnectionpatterns 63A to 63G (an example of the third interconnection pattern)that are formed on the upper surface of the ceramic substrate 31E (anexample of the second layer) (between the ceramic substrate 31E and theceramic substrate 31D), and FIG. 12B is a view illustrating an exampleof the interconnection patterns 65A to 65G (an example of the fourthinterconnection pattern) that are formed on the upper surface of theceramic substrate 31D (an example of the first layer) (on a sideopposite to the interconnection patterns 63A to 63D in the ceramicsubstrate 31D). As shown in FIGS. 12A and 12B, all of theinterconnection patterns 63A to 63G and 65A to 65G in the fourthembodiment are formed in a linear shape, and the length of theinterconnection pattern (an example of the first interconnectionpattern) including the interconnection patterns 63A to 63G, the vias 64Ato 64M, and the interconnection patterns 65A to 65G is longer than thedistance between the bottom surface (one surface) and the upper surface(the other surface) of the ceramic package 30, that is, the thickness ofthe ceramic package 30 (for example, approximately 1 mm). Accordingly,the second conductor pattern including the interconnection patternconstituted by the interconnection patterns 63A to 63G, the vias 64A to64M, and the interconnection patterns 65A to 65G is longer than aninternal conductor pattern (the length thereof is approximately equal tothe thickness of a ceramic substrate) that is formed with the shortestroute from an external conductor pattern (in a linear shape on an upperside) similar to the related art, and has a length that is at leastapproximately two or more times the length of the internal conductorpattern. Therefore, a resistance value of the second conductor patternis set to approximately two or more times a resistance value of theinternal conductor pattern in the related art. In addition, it ispreferable that the sum of the length of interconnection patterns 63A to63G and 65A to 65G is at least longer than a half of the length (forexample, approximately 5 mm) of one side of the surface of the ceramicsubstrate 31E to increase the resistance value of the second conductorpattern.

In addition, as is the case with the second embodiment, theinterconnection patterns 63A to 63G in the fourth embodiment areinterposed between the interconnection pattern 71 and theinterconnection pattern 72 which are parts of the third conductorpattern and have a constant potential. In addition, the interconnectionpatterns 65A to 65G in the fourth embodiment are interposed between theinterconnection pattern 73 and the interconnection pattern 74 which areparts of the third conductor pattern. Accordingly, the periphery of theinterconnection patterns 63A to 63G and 65A to 65G has low impedance,and thus noise overlapping is less likely to occur in theinterconnection patterns 63A to 63G and 65A to 65G.

In addition, as shown in FIG. 13 that is a view obtained bysuperimposing FIG. 12B on FIG. 12A, in the third embodiment, at least apart of the second conductor pattern is formed in a meandering shape ina plan view of the ceramic package 30 (when viewed in a directionperpendicular to the bottom surface).

In addition, the other configurations of the physical quantity sensor 1of the fourth embodiment are the same as those of the second embodiment,and thus a description thereof will not be repeated.

As described above, according to the physical quantity sensor of thefourth embodiment, since a part of at least one internal conductorpattern (second conductor pattern) that is connected to the externalterminal is a conductor pattern having a meandering shape (zigzag shape)when viewed in a direction perpendicular to the bottom surface of theceramic package 30 due to a plurality of the interconnection patternsthat are interconnected in a plurality of the layers of the ceramicpackage 30 and a plurality of the vias that connect the plurality ofinterconnection patterns, it is possible to increase noise resistance.In addition, even in a case where an external circuit is connected,occurrence of ringing is suppressed and communication failure ormalfunction is less, and thus it is possible to realize highreliability. In addition, it is possible to reduce noise emission fromthe viewpoint of electromagnetic compatibility (EMC), and thus an effecton other apparatuses or an apparatus itself can be made to be small. Inaddition, it is possible to obtain resistance to a certain degree atwhich malfunction does not occur with respect to strong electromagneticwave noise from the outside.

In addition, according to the physical quantity sensor of the fourthembodiment, the length of the second conductor pattern can be made to belonger in comparison to the second embodiment, and thus a resistancevalue of the second conductor pattern further increases. Accordingly,with regard to the above-described effects, higher effects in comparisonto the second embodiment may be expected.

In addition, in the physical quantity sensor of the fourth embodiment,in a case of using the second conductor pattern in a communication line,as a communication frequency becomes higher, the interconnectionpatterns 63A to 63G and 65A to 65G operate as an inductance. Inaddition, an equivalent circuit configuration of a low-pass filter of Land C is structurally completed by the inductance, an electrostaticcapacitance that is formed between the interconnection patterns 63A to63G and the interconnection patterns 71 and 72 which have a constantpotential, and an electrostatic capacitance that is formed between theinterconnection patterns 65A to 65G and the interconnection patterns 73and 74 which have a constant potential, and thus there is an effect ofremoving a high-frequency noise. When the communication frequencybecomes higher, the effect of the low-pass filter can be exhibited in amore significant manner.

In addition, according to the physical quantity sensor of the fourthembodiment, since the inner-layer interconnection of the ceramic package30 is used, it is possible to realize an interconnection pattern at thelow cost without using an external mounting component while notincreasing a mounting area.

1-5. Fifth Embodiment

A physical quantity sensor of a fifth embodiment is different from thephysical quantity sensors of the first to fourth embodiments in that apart of the second conductor pattern is constituted by a material havinga sheet resistance value higher than that of the first conductorpattern. Here, the sheet resistance value R′=ρ/d [Ω/□]. ρ represents aresistivity of the conductor pattern, and d represents the thickness ofthe conductor pattern. In the following description, as a specificexample of the physical quantity sensor of the fifth embodiment, anexample that is modified from the first embodiment is exemplified, butother embodiments may be modified.

FIG. 14 is a view illustrating a longitudinal structure of a ceramicpackage 30 in a fifth embodiment. In addition, FIG. 15 is a viewillustrating an example of an interconnection pattern that is formed onthe upper surface of the ceramic substrate 31B. As shown in FIG. 14, inthe fifth embodiment, the configuration of interconnection patterns 61,63, 65, 67, and 69, vias 62, 64, 66, and 68, and a metallized region 70is the same as the first embodiment. In addition, in the fifthembodiment, as shown in FIGS. 14 and 15, a high-resistance material 80having a sheet resistance value higher than that of the interconnectionpattern 61 (first conductor pattern) is applied to apart of themetallized region 70. As the high-resistance material 80, for example, ahigh-resistance material, which is obtained by using a resistor pastesuch as ruthenium dioxide (RuO₂) as a ruthenium (Ru)-based oxide, may beused.

That is, the interconnection pattern 61 (first conductor pattern), whichis an external conductor pattern, is electrically connected to theintegrated circuit (IC) 10 through an internal conductor pattern (secondconductor pattern) that is constituted by the via 62, theinterconnection patterns 63A to 63D, the vias 64A to 64G, theinterconnection patterns 65A to 65D, the via 66, the interconnectionpattern 67, the via 68, the interconnection pattern 69, the metallizedregion 70, and the high-resistance material 80.

In addition, as shown in FIG. 15, a low-impedance interconnectionpattern 75, which is a part of the conductor pattern having a constantpotential (ground potential), is formed on most of the upper surface ofthe ceramic substrate 31B, and thus noise overlapping is less likely tooccur in the interconnection pattern 69.

In addition, the other configurations of the physical quantity sensor 1of the fifth embodiment are the same as those of the first embodiment,and thus a description thereof will not be repeated.

As described above, according to the physical quantity sensor of thefifth embodiment, since at least one internal conductor pattern (secondconductor pattern), which is connected to an external terminal, has aninterconnection pattern which is formed on a surface of at least onelayer of the ceramic package 30 and is longer than the thickness of theceramic package 30, and a part of the second conductor pattern isconstituted by a material having a sheet resistance value higher thanthat of the first conductor pattern, it is possible to increase noiseresistance. In addition, even in a case where an external circuit isconnected, occurrence of ringing is suppressed and communication failureor malfunction is less, and thus it is possible to realize highreliability. In addition, it is possible to reduce noise emission fromthe viewpoint of electromagnetic compatibility (EMC), and thus an effecton other apparatuses or an apparatus itself can be made to be small. Inaddition, it is possible to obtain resistance to a certain degree atwhich malfunction does not occur with respect to strong electromagneticwave noise from the outside.

In addition, according to the physical quantity sensor of the fifthembodiment, the high-resistance material 80 is provided, and thus theresistance value of the second conductor pattern can be made to behigher in comparison to the first embodiment. Accordingly, with regardto the above-described effects, higher effects in comparison to thefirst embodiment may be expected.

In addition, according to the physical quantity sensor of the fifthembodiment, since the inner-layer interconnection of the ceramic package30 is used, it is possible to realize an interconnection pattern at thelow cost without using an external mounting component while notincreasing a mounting area.

2. Electronic Apparatus

FIG. 16 is a functional block diagram of an electronic apparatus of thisembodiment. In addition, FIG. 17 is a view illustrating an example of anexternal appearance of a smart phone that is an example of theelectronic apparatus of this embodiment.

The electronic apparatus 300 of this embodiment includes a physicalquantity sensor 310, a central processing unit (CPU) 320, an operationunit 330, a read only memory (ROM) 340, a random access memory (RAM)350, a communication unit 360, a display unit 370, and a sound outputunit 380. In addition, the electronic apparatus of this embodiment mayhave a configuration in which parts of constituent elements (respectiveportions) in FIG. 16 are omitted or modified, or other constituentelements are added.

The physical quantity sensor 310 is a device that detects a physicalquantity, and outputs a signal (physical quantity signal) in a levelaccording to a physical quantity that is detected. For example, thephysical quantity sensor 310 may be an inertial sensor that detects atleast a part of a physical quantity such as acceleration, an angularvelocity, and a speed, or may be an inclinometer that measures aninclination angle. As the physical quantity sensor 310, for example, thephysical quantity sensor 1 of the respective embodiments is applicable.

The CPU 320 performs various calculation processes or control process byusing the physical quantity signal that is output from the physicalquantity sensor 310 according to a program that is stored in the ROM 340and the like. In addition, the CPU 320 performs various processesaccording to operation signals transmitted from the operation unit 330,a process of controlling the communication unit 360 to conduct datacommunication with the outside, a process of transmitting a displaysignal to display various kinds of information on the display unit 370,a process of outputting various kinds of sound to the sound output unit380, and the like.

The operation unit 330 is an input device that is constituted by anoperation key, a button switch, and the like, and outputs an operationsignal according to operation by a user to the CPU 320.

The ROM 340 stores a program to allow the CPU 320 to perform variouscalculation processes or control processes, data, and the like.

The RAM 350 is used as a work region of the CPU 320, and temporarilystores a program or data that is read out from the ROM 340, data that isinput from the operation unit 330, a result of operation that isperformed by the CPU 320 according to various programs, and the like.

The communication unit 360 performs various kinds of control toestablish data communication between the CPU 320 and an external device.

The display unit 370 is a display device that is constituted by a liquidcrystal display (LCD) or an organic EL display, and the like, anddisplays various kinds of information on the basis of a display signalthat is input from the CPU 320. The display unit 370 may be providedwith a touch panel that functions as the operation unit 330.

The sound output unit 380 is a device such as a speaker that outputssound.

When being equipped with the above-described physical quantity sensor 1of this embodiment as the physical quantity sensor 310, it is possibleto realize an electronic apparatus with higher reliability.

As the electronic apparatus 300, various electronic apparatuses may beconsidered, and examples thereof include a personal computer (forexample, a mobile type personal computer, a laptop type personalcomputer, a note type personal computer, a tablet type personalcomputer), a mobile terminal such as a portable phone, a digital stillcamera, an ink jet type ejection device (for example, an ink jetprinter), a storage area network device such as a router and a switch, alocal area network apparatus, a television, a video camera, a video taperecorder, a car navigation device, a pager, an electronic organizer(also including one equipped with a communication function), anelectronic dictionary, a calculator, an electronic gaming machine, acontroller for game, a word processor, a workstation, a videophone, asecurity television monitor, electronic binoculars, a POS terminal, amedical apparatus (for example, an electronic thermometer, a bloodpressure meter, a blood glucose meter, an electrocardiogram measurementdevice, an ultrasonic diagnostic apparatus, and an electronicendoscope), a fish finder, various measurement apparatuses, meters (forexample, meters of a vehicle, an aircraft, and a ship), a flightsimulator, a head-mounted display, a motion tracer, a motion trackingdevice, a motion controller, a pedestrian dead reckoning (PDR) device,and the like.

3. Moving Object

FIG. 18 is a view (top view) illustrating an example of a moving objectof this embodiment. A moving object 400 shown in FIG. 18 includesphysical quantity sensors 410, 420, and 430, controllers 440, 450, and460, and a battery 470. In addition, the moving object of thisembodiment may have a configuration in which parts of constituentelements (respective portions) in FIG. 18 are omitted or modified, orother constituent elements are added.

The physical quantity sensors 410, 420, and 430, and the controllers440, 450, and 460 operate using a power supply voltage supplied from thebattery 470.

The physical quantity sensors 410, 420, and 430 are devices that detecta physical quantity, and output a signal (physical quantity signal) in alevel according to a physical quantity that is detected, and examplesthereof include an angular velocity sensor, an acceleration sensor, aspeed sensor, an inclinometer, and the like.

The controllers 440, 450, and 460 perform various kinds of control foran attitude control system, a roll-over prevention system, a brakesystem, and the like by using apart or the entirety of physical quantitysignals that are output from the physical quantity sensors 410, 420, and430, respectively.

As the physical quantity sensors 410, 420, and 430, the above-describedphysical quantity sensor 1 of the respective embodiments is applicable,thereby securing higher reliability.

As the moving object 400, various moving objects can be considered, andexamples thereof include a vehicle (also including an electric vehicle),an aircraft such as a jet aircraft and a helicopter, a ship, a rocket, asatellite, and the like.

4. Modification Example

The invention is not limited to the embodiments, and variousmodification can be made in a range without departing from the gist ofthe invention.

For example, in all of the above-described embodiments, although a partof the second conductor pattern is configured to have a linear shape(approximately linear shape) or a meandering shape when viewed in adirection that is perpendicular to or parallel with the bottom surfaceof the ceramic package 30, a shape such as an L-shape and a step shapeother than the linear shape (approximately linear shape) or themeandering shape is also possible.

The above-described embodiments and modification example areillustrative only, and the invention is not limited thereto. Forexample, the respective embodiments and the modification example may becombined in an appropriate manner.

The invention includes substantially the same configuration (forexample, a configuration in which a function, a method, and a result arethe same, or a configuration in which an object and an effect are thesame) as the configuration described in the embodiments. In addition,the invention includes a configuration in which substitution is made toportions that are not essential in the configuration described in theembodiments. In addition, the invention includes a configuration capableof exhibiting the same operational effect as the configuration describedin the embodiments or a configuration capable of achieving the sameobject. In addition, the invention includes a configuration in which aknown technology is added to the configuration described in theembodiments.

1-12. (canceled)
 13. A physical quantity sensor comprising: a sensorelement; an integrated circuit that is electrically connected to thesensor element; and a multilayer ceramic package with an opening portionin which the sensor element and the integrated circuit are mounted,wherein the multilayer ceramic package includes a first externalterminal disposed on one outer surface of the multilayer ceramicpackage, a first internal conductor pattern that is disposed inside themultilayer ceramic package, the first internal conductor patternincludes a plurality of interconnection patterns, and a plurality ofvias that electrically connect the plurality of interconnectionpatterns, and at least one of the plurality of interconnection patternsis longer than a half of a length of one side of the surface of themultilayer ceramic package, wherein the integrated circuit includes: afirst terminal configured to propagate a rectangular wave signal forcommunication, a second terminal configured to be supplied a powersupply voltage, and at least one of the first terminal and the secondterminal is connected to the first external terminal via the firstinternal conductor pattern.
 14. The physical quantity sensor accordingto claim 13, wherein in a plan view of the multilayer ceramic package,the at least one of the plurality of interconnection patterns extends atleast from the one end side of the integrated circuit to the other endside.
 15. The physical quantity sensor according to claim 13, whereinthe at least one of the plurality of interconnection patterns includes alinear shape.
 16. The physical quantity sensor according to claim 13,wherein the at least one of the plurality of interconnection patternsincludes a meandering shape.
 17. The physical quantity sensor accordingto claim 13, wherein the multilayer ceramic package includes a secondinternal conductor pattern that is disposed inside the multilayerceramic package, the second internal conductor pattern includes aninterconnection pattern which has a constant potential and is providedalong the at least one of the plurality of interconnection patterns. 18.The physical quantity sensor according to claim 13, wherein themultilayer ceramic package includes a second external terminal disposedon the one outer surface of the multilayer ceramic package, a thirdinternal conductor pattern that is disposed inside the multilayerceramic package, the third internal conductor pattern includes aplurality of interconnection patterns, and a plurality of vias thatelectrically connect the plurality of interconnection patterns, and atotal length of the plurality of interconnection patterns of the thirdinternal conductor pattern is shorter than a half of the length of oneside of the surface of the multilayer ceramic package, wherein theintegrated circuit includes: a detection circuit connected to the sensorelement, a third terminal configured to output a signal from thedetection circuit, and the third terminal is connected to the secondexternal terminal via the third internal conductor pattern.
 19. Thephysical quantity sensor according to claim 13, wherein the multilayerceramic package includes an interconnection pattern disposed on asurface of the opening portion including a material having a sheetresistance value higher than a sheet resistance value of the firstexternal terminal, and the at least one of the first terminal and thesecond terminal is connected to the first external terminal via theinterconnection pattern disposed on the surface of the opening portion.20. A physical quantity sensor comprising: a sensor element; anintegrated circuit that is electrically connected to the sensor element;and a multilayer ceramic package with an opening portion in which thesensor element and the integrated circuit are mounted, wherein themultilayer ceramic package includes: a first external terminal disposedon one outer surface of the multilayer ceramic package, a first internalconductor pattern that is disposed inside the multilayer ceramicpackage, the first internal conductor pattern includes a plurality ofinterconnection patterns, and a plurality of vias that electricallyconnect the plurality of interconnection patterns, and a total length ofthe plurality of interconnection patterns is longer than half of alength of one side of the outer surface of the multilayer ceramicpackage, wherein the integrated circuit includes: a first terminalconfigured to propagate a rectangular wave signal for communication, asecond terminal configured to be supplied power supply voltage, and atleast one of the first terminal and the second terminal is connected tothe first external terminal via the first internal conductor pattern.21. An electronic apparatus comprising: the physical quantity sensoraccording to claim
 13. 22. An electronic apparatus comprising: thephysical quantity sensor according to claim
 20. 23. A moving objectcomprising: the physical quantity sensor according to claim
 11. 24. Amoving object comprising: the physical quantity sensor according toclaim 20.